VFSHAY. _ 7 WWw'V'Shay'C°m Vishay General Semiconductor
lnstantaneous F0nNarcl Current (A)
Junction Capacitance (pF)
‘— ——
lnuulllll
010.5 0.6 07 0.0 0.9 T0 11 1.2 1.3 1.4
instantaneous Fonuard Voltage M Reverse Voltage (V)
Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance
I000 1000
T00
100
DD01
instantaneous Reverse Current (HA)
Transient Thermal impedance (“C/W) Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance
PACKAGE ouTLINE DIMENSIONS in inches (millimeters)
D0-220AA (SMP)
Camude Band 4-‘ (47 0.012 (0.30) REF.
l —I A
0.033 (215) 0.053 (1.35) 0.036 (0.01)
0.074 (1.35) 0.041 (1.05) 0.024 (0.51)
l *— T)
“M2 (3 6‘) 0.032 (0.30)0126 (3 T0) “ Ram
0153 (4.00)
0145 (3.70)0.025 0.030umsmss) * ————0.004 (U )0) 0.045 (L15) I
0 ‘U5 (0.535) (0.752)
L 0.033 (0.35) t
it 0100 7 0.050
4:‘ ?00I2(0.30) 0.UtS(U.45)4_ if 12-54l 1'27)0000 (0.00) 0.006 (015) Tl
Revision: 14?Aug-13 3 Document Number: 89290
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